2SC5825_11 Datasheet, PDF (2/4 Pages) Rohm – Power transistor

2SC5825
Electrical characteristics (Ta=25C)
Parameter
Symbol Min. Typ. Max. Unit
Condition
Collector-emitter breakdown voltage BVCEO
60
−
−
V
IC=1mA
Collector-base breakdown voltage BVCBO
60
−
−
V
IC=100μA
Emitter-base breakdown voltage
BVEBO
6
−
−
V
IE=100μA
Collector cut-off current
ICBO
−
−
1.0
μA
VCB=40V
Emitter cut-off current
IEBO
−
−
1.0
μA
VEB=4V
Collector-emitter saturation voltage VCE (sat)
−
200
500
mV
IC=2A
∗1
IB=200mA
DC current gain
hFE
120
−
390
−
VCE=2V
IC=100mA
VCE=10V
∗1
Transition frequency
fT
−
200
−
MHz IE= −100mA
f=10MHz
Corrector output capacitance
VCB=10V
Cob
−
20
−
pF
IE=0mA
Turn-on time
Storage time
Fall time
f=1MHz
Ton
−
50
−
ns
IC=3A
∗2
Tstg
−
150
−
ns
IB1=300mA
IB2= −300mA
Tf
−
30
−
ns
VCC 25V
∗1 Non repetitive pulse
∗2 See Switching charactaristics measurement cicuits
hFE RANK
Q
120−270
R
180−390
Data Sheet
Electrical characteristic curves
1000
Tstg
Ta=25°C
VCC=25V
IC / IB=10 / 1
Ton
100
Tf
1000
100 _Ta=125°C
Ta=25°C
Ta= −40°C
10
VCE=2V
1000
100
10
Ta=25°C
VCE=5V
VCE=3V
VCE=2V
10
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.1 Switching Time
1
0.001 0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.2 DC Current Gain vs.
Collector Current (Ι)
1
0.001 0.01 0.1
1
10 100
COLLECTOR CURRENT : IC (A)
Fig.3 DC Current Gain vs.
Collector Current (ΙΙ)
10
1
Ta=125°C
Ta=25°C
Ta= −40°C
0.1
IC / IB=10 / 1
0.01
0.001 0.01 0.1
1
10
100
COLLECTOR CURRENT : IC (A)
Fig.4 Collector-Emitter Saturation
Voltage vs.
Collector Current (Ι)
10
1
IC / IB=20 / 1
IC / IB=10 / 1
0.1
Ta=25°C
0.01
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-Emitter Saturation
Voltage vs.
Collector Current (ΙΙ)
10
IC / IB=10 / 1
1
Ta=125°C
Ta=25°C
Ta= −40°C
0.1
0.001 0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.6 Base-Emitter Saturation
Voltage vs.Collecter Current
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2011.10 - Rev.D