2SC5825_11 Datasheet, PDF (1/4 Pages) Rohm – Power transistor

Power transistor (60V, 3A)
2SC5825
Features
1) High speed switching.
(Tf : Typ. : 30ns at IC = 3A)
2) Low saturation voltage, typically
(Typ. : 200mV at IC = 2A, IB = 0.2mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SA2072.
Applications
Low frequency amplifier
High speed switching
Structure
NPN Silicon epitaxial planar transistor
Packaging specifications
Type
2SC5825
Package
Code
Basic ordering unit (pieces)
Taping
TL
2500
Dimensions (Unit : mm)
CPT3
(SC-63)
<SOT-428>
(1) Base
(2) Collector
(3) Emitter
Each lead has same dimensions
Abbreviated symbol : C5825
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
Continuous
IC
Pulsed
ICP
Power dissipation
PC
Junction temperature
Range of storage temperature
∗1 Pw=100ms
∗2 Each terminal mounted on a recommended land
∗3 Tc=25°C
Tj
Tstg
Limits
60
60
6
3
6
1.0
10.0
150
−55 to 150
Unit
V
V
V
A
A ^∗1
W ^∗2
W ^∗3
°C
°C
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2011.10 - Rev.D