2SC5824_1 Datasheet, PDF (2/4 Pages) Rohm – Power transistor (60V, 3A)

Transistor
2SC5824
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector−base breakdown voltage BVCBO 60
Collector−emitter breakdown voltage BVCEO 60
Emitter−base breakdown voltage BVEBO 6
Collector cut-off current
Emitter cut-off current
ICBO
−
IEBO
−
Collector−emitter staturation voltage VCE(sat) −
DC current gain
Transition frequency
hFE
120
fT
−
Collector output capacitance
Turn-on time
Cob
−
Ton
−
Storage time
Tstg
−
Fall time
Tf
−
∗1 Non repetitive pulse
∗2 See switching charactaristics measurement circuits
Typ.
−
−
−
−
−
200
−
200
20
50
150
30
Max.
−
−
−
1.0
1.0
500
390
−
−
−
−
−
Unit
Conditions
V IC=100µA
V IC=1mA
V IE=100µA
µA VCB=40V
µA
mV
−
MHz
pF
VEB=4V
IC=2A, IB=200mA ^∗1
VCE=2V, IC=100mA
VCE=10V, IE= −100mA, f=10MHz ^∗1
VCB=10V, IE=0mA, f=1MHz
ns IC=3A,
ns ^IB1=300mA
IB2= −300mA
ns _{VCC 25V} ∗2
zhFE RANK
Q
120-270
R
180-390
zElectrical characteristic curves
10
1ms
100ms
1
10ms
DC
0.1
0.01
Single non repoetitive pulse
0.001
0.1
1
10
100
COLLECTOR EMITTER VOLTAGE : VCE (V)
Fig.1 Safe operating area
1000
Ta=25°C
VCE=5V
100
VCE=3V
1000
Tstg
Ta=25°C
VCC=25V
IC/IB=10/1
100
Ton
Tf
10
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.2 Switching Time
10
IC/IB=10/1
Ta=125°C
1
Ta=100°C
1000
100 ^{Ta= −40°C}
10
VCE=2V
Ta=25°C
Ta=100°C
Ta=125°C
1
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.3 DC current gain vs. collector
current
10
Ta=25°C
1
10
VCE=2V
0.1
Ta=25°C
Ta= −40°C
0.1
IC/IB=20/1
IC/IB=10/1
1
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs. collector
current
0.01
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
0.01
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-emitter saturation voltage Fig.6 Collector-emitter saturation voltage
vs. Collector Current
vs. collector current
Rev.A
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