2SC5824_1 Datasheet, PDF (1/4 Pages) Rohm – Power transistor (60V, 3A)

Transistor
Power transistor (60V, 3A)
2SC5824
2SC5824
zFeatures
1) High speed switching. (Tf : Typ. : 30ns at IC = 3A)
2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A,
IB = 200mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SA2071.
zExternal dimensions (Unit : mm)
MPT3
4.0
1.0
2.5
0.5
(1)
(2)
(3)
zApplications
NPN Silicon epitaxial planar transistor
(1)Base(Gate)
Each lead has same dimensions
(2)Collector(Drain)
(3)Emitter(Sourse) Abbreviated symbol : UP
zStructure
Low frequency amplifier
High speed switching
zPackaging specifications
Type
2SC5824
Package
Code
Basic ordering unit
(pieces)
Taping
T100
1000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Power dissipation
PC
Junction temperature
Tj
Range of storage temperature
Tstg
∗1 Pw=100ms
∗2 Each terminal mounted on a recommended land.
∗3 Mounted on a 40x40x0.7(mm) ceramic substrate
Limits
60
60
6
3
6
500
2.0
150
−55~+150
Unit
V
V
V
A
A ^∗1
mW ^∗2
W ^∗3
°C
°C
Rev.A
1/3