2SA2071_11 Datasheet, PDF (2/4 Pages) Rohm – Power transistor

2SA2071
Electrical characteristics (Ta=25C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO −60 − − V IC= −100μA
Collector-emitter breakdown voltage BVCEO −60 − − V IC= −1mA
Emitter-base breakdown voltage
BVEBO −6 −
−
V IE= −100μA
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
ICBO
IEBO
VCE (sat)
− − −1.0 μA VCB= −40V
− − −1.0 μA VEB= −4V
− −200 −500 mV IC= −2A, IB= −0.2A ^∗1
DC current gain
Transition frequency
hFE 120 − 270 − VCE= −2V, IC= −100mA
fT
− 180 − MHz VCE= −10V, IE=10mA, f=10MHz ^∗1
Collector output capacitance
Turn-on time
Storage time
Fall time
Cob
Ton
Tstg
Tf
− 50 −
− 20 −
− 150 −
− 20 −
pF VCB= −10V, IE=0mA, f=1MHz
ns ^{IC= −3A}
ns
IB1= −300mA
IB2=300mA
ns VCC −25V ^∗2
∗1 Non repetitive pulse
∗2 See switching charactaristics measurement cicuits
hFE RANK
Q
120−270
Data Sheet
Electrical characteristic curves
1000
Tstg
Ta=25°C
VCC= −25V
IC/IB=10/1
Tf
Ton
100
10
−0.01
−0.1
−1
−10
COLLECTOR CURRENT : IC (A)
Fig.1 Switching Time
1000
100
Ta=125°C
Ta=25°C
Ta= −40°C
10
VCE= −2V
1
−0.001 −0.01 −0.1
−1
−10
COLLECTOR CURRENT : IC (A)
Fig.2 DC Current Gain vs.
Collector Current (Ι)
1000
100
10
Ta=25°C
VCE= −5V
VCE= −3V
VCE= −2V
1
−0.001 −0.01 −0.1
−1
−10
COLLECTOR CURRENT : IC (A)
Fig.3 DC Current Gain vs.
Collector Current (ΙΙ)
−10
−1
Ta=125°C
Ta=25°C
Ta= −40°C
−0.1
IC/IB=10/1
−0.01
−0.001 −0.01 −0.1
−1
−10
COLLECTOR CURRENT : IC (A)
Fig.4 Collector-Emitter Saturation
Voltage vs.
Collector Current (Ι)
−10
−1
IC/IB=20/1
IC/IB=10/1
−0.1
Ta=25°C
−0.01
−0.001 −0.01 −0.1
−1
−10
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-Emitter Saturation
Voltage vs.
Collector Current (ΙΙ)
−10
IC/IB=10/1
−1
Ta= −40°C
−0.1 Ta=25°C
Ta=125°C
−0.01
−0.001 −0.01 −0.1
−1
−10
COLLECTOR CURRENT : IC (A)
Fig.6 Base-Emitter Saturation
Voltage vs. Collecter Current
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2011.03 - Rev.C