2SA2071_11 Datasheet, PDF (1/4 Pages) Rohm – Power transistor

Power transistor (60V, 3A)
2SA2071
Features
1) High speed switching. (Tf : Typ. : 20ns at IC = ^3A)
2) Low saturation voltage, typically
(Typ. : 200mV at IC = ^2A, IB = ^0.2A)
3) Strong discharge power for inductive load and capacitance load.
4) Complements the 2SC5824
Applications
Low Frequency Amplifier
High speed switching
Dimensions (Unit : mm)
MPT3
(1)Base(Gate)
(2)Collector(Drain)
(3)Emitter(Sourse)
Each lead has same dimensions
Abbreviated symbol : UN
Structure
PNP Silicon epitaxial planar transistor
Packaging specifications
Type
Package
Code
Basic ordering unit (pieces)
2SA2071
Taping
T100
1000
Absolute maximum ratings (Ta=25C)
Parameter
Symbol Limits
Collector-base voltage
VCBO
−60
Collector-emitter voltage
VCEO
−60
Emitter-base voltage
VEBO
−6
Collector current
IC
−3
ICP
−6
Power dissipation
500
PC
2.0
Junction temperature
Tj
150
Range of storage temperature Tstg −55 to +150
∗1 Pw=100ms
∗2 Mounted on a 40×40×0.7 (mm) ceramic substrate
Unit
V
V
V
A
A ^∗1
mW
W ^∗2
°C
°C
www.rohm.com
1/3
○^c 2011 ROHM Co., Ltd. All rights reserved.
2011.03 - Rev.C