RQ3E160AD Datasheet, PDF (1/12 Pages) Rohm – Nch 30V 16A Middle Power MOSFET

RQ3E160AD
　　Nch 30V 16A Middle Power MOSFET
V_DSS
R_DS(on)(Max.)
I_D
P_D
30V
4.5mΩ
±16A
2W
lFeatures
1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package.
4) Pb-free lead plating ; RoHS compliant
lOutline
HSMT8
　
　
　　　　　　
lInner circuit
　　 ^Datasheet
　　　　　　
　
　
　
　　　　　　
lApplication
Switching
lAbsolute maximum ratings (T_a = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
Power dissipation
Junction temperature
Range of storage temperature
lPackaging specifications
Packing
Reel size (mm)
Type ^{Tape width (mm)}
Basic ordering unit (pcs)
Taping code
Marking
Embossed
Tape
330
12
3000
TB
E160AD
Symbol
Value
Unit
V_DSS
30
V
I_D*1
±16
A
I_D,pulse*2
±64
A
V_GSS
±20
V
E_AS*3
23
mJ
I_AS*3
16
A
P_D*4
2
W
T_j
150
℃
T_stg
-55 to +150
℃
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　
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20140821 - Rev.001 ^{　 　}