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RQ3E075AT Datasheet, PDF (1/13 Pages) Rohm – Pch -30V -18A Middle Power MOSFET
RQ3E075AT
  Pch -30V -18A Middle Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
-30V
23mΩ
±18.0A
15W
lFeatures
1) Low on - resistance.
2) High Power small mold Package (HSMT8).
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.
lOutline
HSMT8
 
      
lInner circuit
   Datasheet
 
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
12
3000
Taping code
TB
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
E075AT
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
-30
V
Continuous drain current
Tc = 25°C
ID*1
Ta = 25°C
ID
±18.0
A
±7.5
A
Pulsed drain current
IDP*2
±30
A
Gate - Source voltage
VGSS
±20
V
Avalanche current, single pulse
IAS*3
-7.5
A
Avalanche energy, single pulse
EAS*3
20
mJ
Power dissipation
PD*1
15
W
PD*4
2.0
W
Junction temperature
Tj
150
℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
                                                                                        
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20160224 - Rev.002