BU99901GUZ-W_12 Datasheet, PDF (1/26 Pages) Rohm – Serial EEPROM Series Standard EEPROM WLCSP EEPROM

Datasheet
Serial EEPROM Series Standard EEPROM
WLCSP EEPROM
BU99901GUZ-W (32Kbit)
●General Description
BU99901GUZ-W series is a serial EEPROM of I²C BUS interface method.
●Features
„ Completely conforming to the world standard I²C BUS.
All controls available by 2 ports of serial clock (SCL) and serial data (SDA)
„ Other devices than EEPROM can be connected to the same port, saving microcontroller port.
„ 1.7V to 3.6V single power source action most suitable for battery use.
„ FAST MODE :400kHz at 1.7V to 3.6V
„ Page write mode useful for initial value write at factory shipment.
„ Auto erase and auto end function at data rewrite.
„ Low current consumption
¾ At write operation (3.3V)
: 0.6mA (Typ.)
¾ At read operation (3.6V)
: 0.6mA (Typ.)
¾ At standby operation (3.6V)
: 0.1µA (Typ.)
„ Write mistake prevention function
¾ Write (write protect) function added
¾ Write mistake prevention function at low voltage
„ Compact package
¾ W(Typ.) x D(Typ.) x H(Max.)
: 1.76mm x 1.05mm x 0.35mm
„ Data rewrite up to 100,000 times
„ Data kept for 40 years
„ Noise filter built in SCL / SDA terminal
„ Shipment data all address FFh
●Page write
Product number
Number of pages
BU99901GUZ-W
32Byte
●Absolute Maximum Ratings (Ta=25℃)
Parameter
symbol
Ratings
Unit
Remarks
Impressed voltage
Permissible dissipation
V_CC
-0.3 to +6.5
V
Pd
220
mW ^{When using at Ta=25℃ or higher 2.2mW to be reduced per 1℃.}
Storage temperature range
Tstg
-65 to +125
℃
Action temperature range
Terminal voltage
Topr
－
-40 to +85
℃
-0.3 to Vcc+1.0 ^*1 V
*1 The Max value of Terminal Voltage is not over 6.5V.
●Memory cell characteristics (Ta=25℃, Vcc=1.7V to 3.6V)
Parameter
Limits
Min.
Typ.
Number of data rewrite times ^*1 100,000
－
Data hold years ^*1
40
－
*1 Not 100% TESTED
Max.
－
－
Unit
Times
Years
●Recommended Operating Ratings
Parameter
Write(Ta=-40℃ to 85℃)
Supply Voltage
Write(Ta=-40℃ to 70℃)
Read(Ta=-40℃ to 85℃)
Input Voltage
Symbol
Vcc
V_IN
Rating
Unit
2.7 to 3.3
1.8 to 3.3
V
1.7 to 3.6
0 to Vcc
V
○Product structure：Silicon monolithic integrated circuit
www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111ï½¥14ï½¥001
○This product is not designed protection against radioactive rays
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TSZ02201-0R2R0G100280-1-2
4.SEP.2012 Rev.001