BU52012NVX Datasheet, PDF (1/5 Pages) Rohm – Hall effect Switch

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STRUCTURE
TYPE
PRODUCT
Silicon Monolithic Integrated Circuit
BU52012 NVX
Hall effect Switch
FEATURES
1) Unipolar detection (S-pole)
2) High sensitivity (B_OP TYP 3.0mT)
3) Low supply current
4) Small package
5) CMOS output type
●ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
PARAMETERS
SYMBOL
Power Supply Voltage
V_DD
Output Current
I_OUT
Power Dissipation
Pd
LIMIT
-0.1～+4.5 ^※1
±0.5
2049 ^※2
UNIT
V
mA
mW
Operating Temperature Range
T_opr
-40～+85 ℃
Storage Temperature Range
T_stg
-40～+125 ℃
※1. Not to exceed Pd
※2. Reduced by 20.49mW for each increase in Ta of 1℃ over 25℃
（mounted on 70mm×70mm×1.6mm Glass-epoxy PCB）
●OPERATING CONDITIONS (Ta=-40～+85℃)
PARAMETERS
SYMBOL MIN TYP MAX UNIT
Power Supply Voltage
V_DD 1.65 3.00 3.60 V
Radiation hardiness is not designed.
REV. A