BD3507HFV_10 Datasheet, PDF (1/16 Pages) Rohm – Nch FET Ultra LDO for PC Chipsets

High Performance Regulators for PCs
Nch FET Ultra LDO
for PC Chipsets
BD3507HFV
No.10030EAT31
●Description
The BD3507HFV is suited for power supply for chipset bus. Though small in size, BD3507HFV adopts power PKG with
radiation fins, and it therefore can be used for a regulator up to 550mA. Because it adopts Nch MOSFET and can form a
ultra LDO power supply of R_ON=300mΩ (TYP), BD3507HFV can compose a high-efficiency system, though it is of a linear
type power supply. The output voltage can be set by VREF terminal and can be synchronized with other power supply.
In addition, it can be used as a high side switch (R_ON = 300mΩ/lo = 550mA) of low-voltage power supply line.
Because ceramic capacitors can be used for output capacitors, BD3507HFV contributes to downsizing and reduced
thickness not only of IC but also of sets.
●Features
1) Built-in high-accuracy buffer circuit (can be set to 0.65-2.7V)
2) Adoption of ceramic capacitors
3) Built-in enable function (0μA at standby)
4) Built-in current limiting circuit (550mA Max)
5) Built-in under voltage lockout circuit (UVLO)
6) Built-in thermal shutdown circuit (TSD)
7) Adoption of ultra-small-size high-power HVSOF6 package (3.0 x 1.6 x 0.75 mm)
●Applications
Notebook PC, desktop PC, digital camera, digital home appliances
●Absolute Maximum Ratings (Ta=25℃)
Parameter
Input Voltage1
Input Voltage2
Enable Input Voltage
Power Dissipation1
Power Dissipation2
Symbol
V_CC
V_IN
V_EN
Pd1
Pd2
Ratings
6.0 ^{*1 *2}
6.0 ^{*1 *2}
6.0 ^{*1 *2}
512.5 ^*3
850.0 ^*4
Unit
V
V
V
mW
mW
Operating Temperature Range
Topr
-10～+100
℃
Storage Temperature Range
Tstg
-55～+150
℃
Maximum Junction Temperature
Tjmax
+150
℃
*1 However, not exceeding Pd.
*2 Maximum rating that can stand instantaneous voltage application such as surge, back EMF, or continuous pulse application whose duty ratio lowers 10%.
*3 In the case of Ta≥25°C (when mounting to 70mmx70mmx1.6mm glass epoxy substrate), derated at 4.1 mW/°C.
*4 In the case of Ta≥25°C (when mounting to 70mmx70mmx1.6mm glass epoxy substrate (copper foil area: 100 mm²)), derated at 6.8 mW/°C.
●Operating Conditions (Ta=25℃)
Parameter
Symbol
Ratings
MIN
MAX
Unit
Input Voltage1
V_CC
4.5
5.5
V
Input Voltage2
V_IN
1.2
Vcc-1
V
VREF Setup Voltage
V_REF
0.65
2.7
V
EN Input Voltage
V_EN
-0.3
5.5
V
Output Current
I_O
0
★ No radiation-resistant design is adopted for the present product.
550
mA
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2010.05 - Rev.A