R1150H_17 Datasheet, PDF (29/30 Pages) RICOH electronics devices division – VOLTAGE REGULATOR (with Wide Input Voltage Range) with RESET

R1150H
Refer to the following formula for setting the voltage of output and detective value.
(VOUT × 0.975) − (-VDET × 1.10) > 0.2
Thermal Shutdown
Thermal shutdown function is included in the R1150HxxxA/B/C/D Series, when the junction temperature is
equal or more than +150°C (Typ.), the operation of regulator would stop. After that, when the junction
temperature is equal or less than +120°C (Typ.), the operation of regulator would restart. Unless the cause of
rising temperature would remove, the regulator repeats on and off, and output waveform would be like
consecutive pulses.
Chip Enable Circuit
Do not make voltage level of chip enable pin keep floating level, or in between VIH and VIL. Unless otherwise,
Output voltage would be unstable or indefinite, or unexpected current would flow internally.
Output Delay Time for Release VDET
In the R1150Hxx1C/D can set an output delay time for release voltage detector with connecting a capacitor to
CD pin. When an input voltage (in the case of R1150Hxx1C) or an output voltage (in the case of R1150Hxx1D)
surpasses the release voltage of its voltage detector (+VDET), the capacitor which is connected to CD pin is started
to be charged, as a result, CD pin voltage rises. When the CD pin voltage surpasses CD pin threshold voltage, the
output voltage of the voltage detector outputs “H”.
Input Voltage or Output Voltage
CD Pin Voltage
Released Voltage (+VDET)
CD Pin Threshold Voltage
GND
Output Voltage
Output Delay Time (tpLH)
GND
Output delay time for release voltage detector can be calculated with the next formula:
tPLH=1.25/200×10⁹×CD (sec)
Input Transient Response
If the input transient speed is equal or faster than 80mV/μs and the transient level difference is equal or more
than 1.5V, the output response may be extremely worse than normal operation. In that case, add a capacitor
between VIN and GND, and make the transient speed of VIN slower than 80mV/µs.
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