RFHA1004 Datasheet, PDF (9/11 Pages) RF Micro Devices – 25W GaN Wide-Band Power Amplifier

RFHA1004
Bias Instruction for RFHA1004 Evaluation Board
 ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board.
 Evaluation board requires additional external fan cooling.
 Connect all supplies before powering evaluation board.
1. Connection RF cables at RFIN and RFOUT.
2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this ground
terminal.
3. Apply -5V to VG.
4. Apply 52V to VD.
5. Increase V_G2 until drain current reaches 88mA or desired bias point.
6. Turn on the RF input.
 Typical test data provided is measured to SMA connector reference plane, and include evaluation board/broadband bias
network mismatch and losses
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS131018
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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