RFHA1004 Datasheet, PDF (2/11 Pages) RF Micro Devices – 25W GaN Wide-Band Power Amplifier

RFHA1004
Absolute Maximum Ratings
Parameter
Drain Voltage (VD)
Gate Voltage (VG)
Operational Voltage
RF - Input Power
Ruggedness (VSWR)
Storage Temperature Range
Operating Temperature Range (Tc)
Operating Junction Temperature (TJ)
Human Body Model
MTTF (TJ < 200 °C, 95% Confidence Limits)*
Thermal Resistance, RTH (junction to case)
measured at TC = 85⁰C, DC bias only
Rating
150
-8 to +2
54
38
10:1
-55 to +125
-40 to +85
200
Class 1A
3E + 06
5.2
Unit
V
V
V
dBm
°C
°C
°C
Hours
°C/W
Caution! ESD sensitive device.
RoHS (Restriction of Hazardous
Substances): Compliant per EU Directive
2011/65/EU.
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
* MTTF – median time to failure for wear-out failure mode (30% Idss degradation) which is determined by the technology process reliability. Refer to
product qualification report for FIT (random) failure rate.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and
current must not exceed the maximum operating values specified in the table on page two.
Bias Conditions should also satisfy the following expression: PDISS < (TJ – TC) / RTH J - C and TC = TCASE
Nominal Operating Parameters
Bias Conditions should also satisfy the following expr_Ses_psi_eon_c:_ifP_iD_cIS_aS_t<_io(T_nJ – TC) / RTH J-C and TC = TCASE
Parameter
Unit Condition
Min Typ Max
Recommended Operating
Conditions
Drain Voltage (VDSQ)
Gate Voltage (VGSQ)
Drain Bias Current
RF Input Power (PIN)
Input Source VSWR
Maximum Gate Current (Ig)
RF Performance Characteristics
Frequency Range
Linear Gain
Power Gain
Gain Variation with Temperature
Input Return Loss (S11)
Output Power (P3dB)
Power Added Efficiency (PAE)
52
V
-4
-3.2
-2.5
V
88
mA
35
dBm
10:1
15.25 mA P3dB, CW
700
2500 MHz Small signal 3dB bandwidth
11.5
dB PIN = 0dBm, 700MHz to 2500MHz
10
dB PIN = 33dBm, 700MHz to 2500MHz
-0.02
dB/ºC
-10
dB
43
dBm 700MHz to 2500MHz
43
% 700MHz to 2500MHz
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS131018
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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