RF5110_1 Datasheet, PDF (9/14 Pages) RF Micro Devices – 3V GSM POWER AMPLIFIER

RF5110
Evaluation Board Schematic
GSM900 Lumped Element
J3
VAPC
50 Ω μstrip
VCC VCC
VAPC
VCC1
C2
10 nF
C3
1 nF
C19
27 pF
L1
11 nH
C17
10 nF
C16
10 nF
C15
47 pF
16 15 14 13
1
12
C18
3.3 μF
C13
1 nF
C14
47 pF
P1
P1-1 1 VCC
P1-2 2 VCC
3 GND
4 GND
CON4
P2
P2-1 1 VAPC
2 GND
3 GND
CON3
J1
RF IN
50 Ω μstrip
C1
56 pF
R1
180 Ω
2
11
3
10
4
9
5678
VCC2
+ C21
3.3 μF
L2
L6
10 Ω Ferrite 1.6 nH
C5
10 nF
C6
1 nF
C20
15 pF
C23
27 pF
C7
27 pF
C8
1.5 pF
L3
8.8 nH
55 mils
C9
15 pF
C10
11 pF
39 mils
C9 and C10 share
the same pad.
L4
3.6 nH
C11*
5.6 pF
C12
56 pF
50 Ω μstrip
*C11 is
adjacent to L4.
J2
RF OUT
C23 and C27 share
the same pad.
Rev A0 DS050318
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
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