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RF5117_11 Datasheet, PDF (8/13 Pages) RF Micro Devices – LINEAR POWER AMPLIFIER
RF5117
Evaluation Board Schematic - IEEE802.11g
2400MHz to 2483MHz
C23
1 F
Part is Backside Grounded.
Place C11 as close
to chip as possible
C12
1 nF
J1
RF IN
50  strip
R2
390 
C1
10 pF
L3
1.2 nH
Murata
C17
2.7 pF
JOH *2
16
1
2
*3 C11
6.8 pF
JOH
15 14 13
12
11
C2
1 nF
R1
390 
C15
1 nF
3
10
Bias
4
9
5117400B
5678
PWR SENSE
C16
1 nF
C3
1 nF
C13
1 nF
PS REF
Notes:
1. C7 - 130 mils from chip.
2. Pin 2 cut from ground.
3. C11 must be placed as close to chip as possible.
4. The VREG trace is cut and a 4.7 k resistor is
placed on the trace.
R3
*4 4.3 k
VREG1 VREG2
VCC
C14
1 nF
C22
10 F
C10
1 nF
L1
12 nH
C9
10 pF
TL1
TL1 = 130 mil (50 )
C5
2.7 pF
JOH
C8
10 pF
*1
50 strip
J2
RF OUT
L2
10 nH
P1
P1-1 1 PS REF
P2
1 GND
P1-2 2 PWR SENSE
2 GND
3 GND
P2-3 3 VCC
P1-4 4 VREG1
P1-5 5 VREG2
CON5
CON3
P3
P3-1 1 VCC
CON1
P4
1 GND
CON1
8 of 13
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DS110617