SDA-1000 Datasheet, PDF (7/7 Pages) RF Micro Devices – GaAs Distributed Amplifier

SDA-1000
Assembly Diagram
Measurement Technique
All specifications and typical performances reported in this document were measured in the following manner. Data was taken
using a temperature controlled probe station utilizing 150μm pitch GSG probes. The interface between the probes and integrated
circuit was made with a coplanar to microstrip ceramic test interface. The test interface was then wire bonded to the
die as shown in the figure below using 1mil diameter bondwires. The spacing between the test interface and the die was
200μm, and the bond wire loop height was 100μm. The thickness of the test interface is 125μm (5mil). The calibration of the
test fixture included the probes and test interfaces, so that the measurement reference plane was at the point of bond wire
attachment. Therefore, all data represents the integrated circuit and accompanying bond wires.
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
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The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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