SDA-1000 Datasheet, PDF (6/7 Pages) RF Micro Devices – GaAs Distributed Amplifier

SDA-1000
Pin Names and Descriptions
Pin
Name
Description
RF Input. This pad is DC coupled and matched to 50Ω from DC to
1
RFIN
20GHz. 50Ω microstrip transmission line on 0.127mm (5mil) thick
alumina thin film substrate is recommended for RF input and
output.
VG2 is an optional pad. It may be used to bias the cascode gate of
2
VG2
the amplifier. If this port is used, a 1000pF bypass capacitor with
the shortest wirebond length possible is recommended to prevent
low frequency gain ripple.
The output drain termination pad. This pad requires a suggested
3
VTO
1000pF bypass capacitor with the shortest wirebond length to
prevent low frequency gain ripple. The value of the external
capacitance limits the low frequency response of the amplifier.
Interface Schematic
RF Output. 50Ω microstrip transmission line on 0.127mm (5mil)
4
RFOUT and
VDD
thick alumina thin film substrate is recommended for RF input and
output. Connect the DC bias (VDD) network to provide drain current
(IDD).
5
VCAS
Provides VG2 gate voltage to the cascode amplifier. The value is
~ (VCC/2 – absolute value of VTI).
6
VG21
Not connected.
Input gate voltage, used to bias the amplifier. The value is between
-1.5VDC (device is pinched OFF) to +0.2VDC (fully ON). This pad
7
VTI
requires a bypass capacitor to ground with the shortest possible
wirebond length to prevent low frequency gain ripple. The value of
the external capacitance limits the low frequency response of the
amplifier.
Ground connection. Connect die bottom directly to ground plane for
Die
GND
best performance. NOTE: The die should be connected directly to
the ground plane with conductive epoxy.
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS140127
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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