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| RFG1M09180 Datasheet, PDF (7/11 Pages) RF Micro Devices – 180W GaN Power Amplifier | |||
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RFG1M09180
Evaluation Board Schematic
VGATE
C7
C6
C5
C4
RF IN
50 ï ïstrip
C1
C2
C3
VDRAIN
+
C13
C14
C15
C16
R1
RFG1M09180
C12
C8
C9
C10
C11
50 ï ïstrip
RF OUT
Evaluation Board Bill of Materials (BOM)
Item
C1, C4, C12, C13
C2, C9, C10
Value
56pF
0.6pF to 4.5pF
C3
C5, C14
C6, C15
C7
C8
C11
C16
R1
2.0pF
0.1µF
4.7µF
100µF
15pF
4.7pF
330µF
10Ω
Manufacturer
ATC
Johanson
ATC
Murata
Murata
Panasonic
ATC
ATC
Panasonic
Panasonic
Manufacturerâs P/N
ATC100B560JT
27271SL
ATC100B2R0BT
GRM32NR72A104KA01L
GRM55ER72A475KA01L
ECE-V1HA101UP
ATC100B150JT
ATC100B4R7CT
EEU-FC2A331
ERJ-8GEYJ100V
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS130823
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
7 of 11
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