RFG1M09180 Datasheet, PDF (1/11 Pages) RF Micro Devices – 180W GaN Power Amplifier

RFG1M09180
180W GaN Power Amplifier
700MHz to 1000MHz
The RFG1M09180 is optimized for commercial infrastructure, military
communication and general purpose amplifier applications in the 700MHz
to 1000MHz frequency band, ideal for WCDMA and LTE applications. Using
an advanced 48V high power density Gallium Nitride (GaN) semiconductor
process optimized for high peak-to-average ratio applications, these high
performance amplifiers achieve high efficiency and flat gain over a broad
frequency range in a single amplifier design. The RFG1M09180 is an input-
matched GaN transistor packaged in an air cavity ceramic package which
provides excellent thermal stability. Ease of integration is accomplished
through the incorporation of simple, optimized matching networks external
to the package that provide wideband gain, efficiency, and linearizable
performance in a single amplifier.
Functional Block Diagram
Ordering Information
RFG1M09180S2
Sample bag with 2 pieces
RFG1M09180SB
Bag with 5 pieces
RFG1M09180SQ
Bag with 25 pieces
RFG1M09180SR
Short Reel with 50 pieces
RFG1M09180TR13
13” Reel with 300 pieces
RFG1M09180PCBA-410 Evaluation Board: 865MHz to 960MHz
RFG1M09180
Package: Flanged Ceramic, 2-Pin,
RF400-2
Features
■ Advanced GaN HEMT Technology
■ Peak Modulated Power > 240W
■ Advanced Heat-Sink Technology
■ Single Circuit for 865MHz to
960MHz
■ 48V Operation Typical
Performance
 P_OUT = 47dBm
 Gain = 20dB
 Drain Efficiency = 39%
 ACP = -32.5dBc
 Linearizable to -55dBc with
DPD
■ -25°C to 85°C Operating
Temperature
■ Optimized for Video Bandwidth
and Minimized Memory Effects
■ RF Tested for 3GPP Performance
■ RF Tested for Peak Power Using
IS95
■ Large Signal Models Available
Applications
■ Commercial Wireless Infrastructure
■ High Efficiency Doherty
■ High Efficiency Envelope Tracking
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
DS130823
RF MICRO DEVICES^® and RFMD^® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
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