RFHA1003 Datasheet, PDF (6/11 Pages) RF Micro Devices – 30MHz TO 512MHz, 9W GaN WIDEBAND

RFHA1003
Typical Performance in Standard Fixed Tuned Test Fixture Matched for 30MHz to
512MHz (T = 25°C, unless noted)
0
Ͳ10
Ͳ20
Ͳ30
Ͳ40
Ͳ50
Ͳ60
Ͳ70
0.1
IMD versus Output Power
(V_D = 28V, I_DQ = 85mA, f1 = 449.5MHz, f2 = 450.5MHz)
ͲIMD3
ͲIMD5
ͲIMD7
IMD3
IMD5
IMD7
1
10
P_OUT, Output Power (WͲ PEP)
Gain versus Output Power
(2ͲTone 1MHz Separation, V_D = 28V, I_DQ varied, fc = 450MHz)
19
18
17
16
15
14
13
12
25mA
55mA
11
85mA
115mA
10
145mA
9
100
15
20
25
30
35
40
P_OUT, Output Power (dBm)
Drain Efficiency versus Output Power
(2ͲTone 1MHz Separation, V_D = 28V, I_DQ varied, fc = 450MHz)
70
60
25mA
55mA
85mA
50
115mA
145mA
40
30
20
10
0
15
20
25
30
35
40
P_OUT, Output Power (dBm)
IMD3 versus Output Power
(2ͲTone 1MHz Separation, V_D = 28V, I_DQ varied, fc = 450MHz)
Ͳ10
Ͳ15
Ͳ20
Ͳ25
Ͳ30
Ͳ35
Ͳ40
0.1
1
10
P_OUT, Output Power (WͲPEP)
25mA
55mA
85mA
115mA
145mA
100
Power Dissipation DeͲrating Curve
(Based on Maximum package temperature and R_TH)
25
20
15
10
5
0
0 10 20 30 40 50 60 70 80 90 100
Maximum Case Temperature (°C)
6 of 11
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
DS120216