RFHA1003 Datasheet, PDF (3/11 Pages) RF Micro Devices – 30MHz TO 512MHz, 9W GaN WIDEBAND

RFHA1003
Parameter
Specification
Min. Typ. Max.
RF Functional Tests
V_GS(Q)
Gain
-3.0
18
18.5
Power Gain
14.3
15.5
Input Return Loss
-10
Output Power
39
39.5
Power Added Efficiency (PAE)
60
70
[1] Test Conditions: V_DSQ = 28V, I_DQ = 55mA, CW, f = 300MHz, T = 25ºC.
[2] Performance in a standard tuned test fixture.
Unit
V
dB
dB
dB
dBm
%
[1], [2]
P_IN = 10dBm
P_IN = 25dBm
Condition
DS120216
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