RFHA1025 Datasheet, PDF (5/10 Pages) RF Micro Devices – 280W GaN Wideband Pulsed Power Amplifier

RFHA1025
Typical Performance in Standard Fixed Tuned Test Fixture
(T = 25°C, unless noted)
20
19
18
17
16
15
14
13
12
47
Gain/Efficiency versus P_OUT, Freq = 1100MHz
(Pulsed 10% duty cycle, PW = 100μS, V_D = 50V, I_DQ = 440mA)
Gain
Drain Eff
48
49
50
51
52
53
54
P_OUT , Output Power (dBm)
65
60
55
50
45
40
35
30
25
55
P_OUT/DE versus Duty Cycle, Freq = 1100MHz
(Pulsed, PW = 100μS, V_D = 50V, I_DQ = 440mA)
375
350
325
300
275
250
Output Power
Drain Eff
225
10
15
20
25
30
35
40
45
Duty Cycle (%)
70
65
60
55
50
45
40
50
P_OUT/DE versus Pulse Width, Freq = 1100MHz
(Pulsed 10% duty cycle, V_D = 50V, I_DQ = 440mA)
400
70
375
65
350
60
325
55
Output Power
Drain Eff
300
50
275
45
250
10
40
100
1000
Pulse Width (μsec)
1200
1000
800
600
400
200
0
0
Pulse Power Dissipation DeͲrating Curve
(Based on Maximum package temperature and Rth)
1mS Pulse Width, 10% Duty Cycle
100ʅS Pulse Width, 10% Duty Cycle
20
40
60
80
100
120
140
Maximum Case Temperature (°C)
DS120928
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