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RFHA1025 Datasheet, PDF (1/10 Pages) RF Micro Devices – 280W GaN Wideband Pulsed Power Amplifier
RFHA1025
280W GaN
Wideband
Pulsed Power
Amplifier
RFHA1025
280W GaN Wideband Pulsed Power Amplifier
Package: Flanged Ceramic, 2-Pin
Features
 Wideband Operation: 0.96GHz to
1.215GHz
 Advanced GaN HEMT Technology
 Advanced Heat-Sink Technology
 Supports Multiple Pulse
Conditions
 10% to 20% Duty Cycle
 100s to 1ms Pulse Width
 Integrated Matching
Components for High Terminal
Impedances
 50V Operation Typical
Performance
 Output Pulsed Power 280W
 Pulse Width 100S,
Duty Cycle 10%
 Small Signal Gain 17dB
 High Efficiency 55%
 -40°C to 85°C Operating
Temperature
Applications
 Radar
 Air Traffic Control and
Surveillance
 General Purpose Broadband
Amplifiers
RF IN
VG
Pin 1 (CUT )
GND
BASE
RF OUT
VD
Pin 2
Functional Block Diagram
Product Description
The RFHA1025 is a 50V 280W high power discrete amplifier designed for L-band
pulsed radar, air traffic control and surveillance and general purpose broadband
amplifier applications. Using an advanced high power density gallium nitride (GaN)
semiconductor process, these high performance amplifiers achieve high output
power, high efficiency and flat gain over a broad frequency range in a single pack-
age. The RFHA1025 is a matched power transistor packaged in a hermetic, flanged
ceramic package. The package provides excellent thermal stability through the use
of advanced heat sink and power dissipation technologies. Ease of integration is
accomplished through the incorporation of single, optimized matching networks
that provide wideband gain and power performance in a single amplifier.
Ordering Information
RFHA1025S2
RFHA1025SB
RFHA1025SQ
RFHA1025SR
RFHA1025TR13
RFHA1025PCBA-410
2-Piece sample bag
5-Piece bag
25-Piece bag
50 Pieces on 7” short reel
250 Pieces on 13” reel
Fully assembled evaluation board 0.96GHz to .215GHz;50V
DS120928
GaAs HBT
 Optimum Technology Matching® Applied
SiGe BiCMOS
GaAs pHEMT
GaN HEMT
GaAs MESFET
Si BiCMOS
Si CMOS
BiFET HBT
InGaP HBT
SiGe HBT
Si BJT
SOI
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
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