RFHA1020 Datasheet, PDF (5/10 Pages) RF Micro Devices – 280W GaN WIDE-BAND PULSED POWER AMPLIFIER

RFHA1020
Gain/ Efficiency versus P_OUT , f = 1300MHz
(Pulsed 10% duty cycle, 100μS, V_D = 50V, I_DQ = 440mA)
P_OUT/DE versus Pulse Width, f = 1300MHz
(Pulsed 10% duty cycle, V_D = 50V, I_DQ = 440mA)
18
70
320
70
310
17
60
300
65
290
16
50
280
60
270
15
40
260
55
250
14
30
240
50
230
13
Gain Drain Eff
20
220
Output Power
45
210
Drain Efficiency
12
10
45
46
47
48
49
50
51
52
53
54
55
Output Power (dBm)
200
10
40
100
1000
Pulse Width (usec)
350
325
300
275
250
225
200
10
P_OUT/DE versus Duty Cycle, f = 1300MHz
(Pulsed, 100μs pulse, V_D = 50V, I_DQ = 440mA)
Output Power
Drain Efficiency
20
30
40
50
Duty Cycle (%)
70
65
60
55
50
45
40
60
1200
1000
800
600
400
200
0
0
Pulse Power Dissipation DeͲrating Curve
(Based on Maximum package temperature and Rth)
1mS Pulse Width, 10% Duty Cycle
100ʅS Pulse Width, 10% Duty Cycle
20
40
60
80
100
120
140
Maximum Case Temperature (°C)
DS120508
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