RFHA1020 Datasheet, PDF (2/10 Pages) RF Micro Devices – 280W GaN WIDE-BAND PULSED POWER AMPLIFIER

RFHA1020
Absolute Maximum Ratings
Parameter
Drain Voltage (V_D)
Gate Voltage (V_G)
Gate Current (I_G)
Operational Voltage
Ruggedness (VSWR)
Storage Temperature Range
Operating Temperature Range (T_C)
Operating Junction Temperature (T_J)
Human Body Model
MTTF (T_J < 200°C)
MTTF (T_J < 250°C)
Rating
150
-8 to +2
155
55
10:1
-55 to +125
-40 to +85
250
Class 1A
3.0E + 06
1.4E + 05
Unit
V
V
mA
V
°C
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Hours
Thermal Resistance, Rth (junction
to case)
T_C = 85°C, DC bias only
0.90
°C/W
T_C = 85°C, 100s pulse, 10% duty
cycle
0.18
T_C = 85°C, 1ms pulse, 10% duty
cycle
0.34
* MTTF - median time to failure for wear-out failure mode (30% I_DSS degradation) which is determined by the technology process reliability.
Refer to product qualification report for FIT(random) failure rate.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage
and current must not exceed the maximum operating values.
Bias Conditions should also satisfy the following expression: P_DISS < (T_J - T_C)/R_{TH J-C} and T_C = T_CASE
Parameter
Min.
Recommended Operating Conditions
Drain Voltage (V_DSQ)
Gate Voltage (V_GSQ)
-8
Drain Bias Current
Frequency of Operation
1200
DC Functional Test
I_{G (OFF)} – Gate Leakage
I_{D (OFF)} – Drain Leakage
V_{GS (TH)} – Threshold Voltage
V_{DS (ON)} – Drain Voltage at High
Current
RF Functional Test
Small Signal Gain
Power Gain
12.3
Input Return Loss
Output Power
54
Drain Efficiency
48
Specification
Typ.
-3
440
-3.5
0.28
14
-8
50
Max.
50
-2
1400
2
2.5
- 5.5
Unit
Condition
V
V
mA
MHz
mA
mA
V
V
dB
dB
dB
dBm
%
V_G = -8V, V_D = 0V
V_G = -8V, V_D = 50V
V_D = 50V, I_D = 40mA
V_G = 0V, I_D = 1.5A
[1], [2]
f = 1200MHz, P_IN = 30dBm
f = 1200MHz, P_IN = 41.7dBm
f = 1200MHz, P_IN = 41.7dBm
f = 1200MHz, P_IN = 41.7dBm
f = 1200MHz, P_IN = 41.7dBm
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DS120508