RF5198 Datasheet, PDF (5/8 Pages) RF Micro Devices – 3V 1950MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE

RF5198
Application Schematic
VCC BIAS may be connected
to VCC; however, VCC must be
maintained above 1.5 V.
VCC BIAS
The 8.2nH inductor may be
required for isolation of VCC1
and VCC2 depending on layout.
8.2 nH
V_CC
10 μF
1 nF
16
15
14
13
RF IN
VMODE
VREG
1 nF
1 nF
1
12
Interstage MN
Q1
IMN
2
11
Q2
Bias
3
10
OMN
Integrated
4
Power
Detector
9
5
6
7
8
RDET
5.1 kΩ
1 nF
Place the 1 nF capacitor next
to RF5198 with minimal trace
length to the PA.
RF OUT/
Z_LOAD
Matching
Component
(See Table Below)
VDET
NOTE:
Additional averaging or lowpass filtering is required on this
pin to reduce the voltage ripple due to the W-CDMA
modulation. A lowpass cutoff frequency is selected through
trade-off between acceptable amplitude ripple and rise/fall
time. The 5.1 kΩ resistor to ground provides a DC return
for the detector temperature compensation circuitry.
Circuit Optimization for Various Output Power Requirements
Output Power (dBm) Matching Component
Sample Part Number
28
12 nH
LQG15HN12NJ02D (Murata)
27.5
N/A
26.5
0.5 pF
GRM1555C1HR50BZ01E (Murata)
26
1.0 pF
GRM1555C1H1R0BZ01E (Murata)
25
1.5 pF
GRM1555C1H1R5BZ01E (Murata)
Typical Efficiency (%)
41
42
42
42
41
Rev A5 060310
2-5