RF5163 Datasheet, PDF (5/12 Pages) RF Micro Devices – 3V-5V, 2.5GHZ LINEAR POWER AMPLIFIER

RF5163
The RF5163 has primarily been characterized with a voltage on V_REG1 and V_REG2 of +3.0V_DC. However, the RF5163 will
operate from a wide range of control voltages. If a different control voltage is desired, contact RFMD Sales or Applica-
tions Engineering for additional data and guidance.
RF5163PCBA-WD Evaluation Board:
The RF5163PCBA-WD Evaluation Board was developed to assist prospective customers of the RF5163 with a com-
pletely characterized medium to high power amplifier solution incorporating a highly linear driver amplifier stage. In appli-
cations requiring more than 20dB to 22dB amplifier stage gain, the RF5163PCBA-WD Evaluation Board design may be
employed to achieve higher gain combined with ultra linear RF power output for high peak-to-average power ratio appli-
cations (e.g., orthogonal frequency division multiplex (OFDM) modulation).
Figure 1 below shows the major component line-up for an ultra linear fixed application (e.g., an access point (AP)) trans-
mitter capable of producing +26dBm RF P_OUT with an amplifier stage (driver + final stage power amplifier IC, RF2373 +
RF5163) EVM contribution of < 2.5% EVM, RMS (mean).
Antenna
Maximum Total Transmit EVM (RMS, Mean) @ 54Mbps:
RF Pout = +26dBm with Transmit 'Chain' EVM < 3.8%
RFMD RF5163
PA IC
G=20dB
RF In = +6dBm;RF Out=+26dBm
EVM < 2.0%
Vcc=+5Vdc
RFMD RF2373
Driver Amplifier
G=15dB
RF In = -9dBm; RF Out = +6dBm
EVM < 1%
Vcc = +5 Vdc
RFMD RF2959
WLAN "g"
Transciever IC
Vcc = 3 Vdc
RF Out = -9dBm
@54Mbps
EVM < 3%
OFDM
(IEEE802.11g/n)
MAC + BBP IC
Ethernet
Processor
PA Stage EVM Contribution
<2.5% @ +26dBm RF Pout
Figure 1. IEEE802.11g/n AP Transmitter Major Component Line-Up
Rev A12 061114
2-631