ZXT13P12DE6_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – PNP LOW SATURATION SWITCHING TRANSISTOR

ZXT13P12DE6
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector-Base Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Cut-Off Current
ON CHARACTERISTICS (Note 9)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
Turn-On Time
Turn-Off Time
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICES
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Cobo
t(on)
t(off)
Min Typ
-20 -33
-12 -25
-7.5 -8.5






300 500
300 450
200 300
20
30
 -7.5
 -68
 -135
 -200
 -150





55
 115
 70
 265
Note: 9. Measured under pulsed conditions; pulse width  300μs, duty cycle  2%.
Max



-100
-100
-100

900


-10
-90
-175
-250
-175
-1.0
-0.9




Unit
Test Condition
V I_C = -100μA
V I_C = -10mA
V I_E = -100μA
nA V_CB = -16V
nA V_EB = -6V
nA V_CES = -16V
 I_C = -10mA, V_CE = -2V
 I_C = -1A, V_CE = -2V
 I_C = -4A, V_CE = -2V
 I_C = -15A, V_CE = -2V
IC = -100mA, IB = -10mA
IC = -1A, IB = -10mA
mV I_C = -3A, I_B = -50mA
IC = -4A, IB = -50mA
IC = -4A, IB = -400mA
V I_C = -4A, I_B = -50mA
V I_C = -4A, V_CE = -2V
MHz
pF
ns
ns
VCE = -10V, IC = -50mA, f = 50MHz
VCB = -10V, f = 1MHz
VCC = -10V, IC = -3A
IB1 = IB2 = -60mA
ZXT13P12DE6
Document Number: DS33637 Rev. 2 - 2
4 of 7
www.diodes.com
October 2015
© Diodes Incorporated