ZXT13P12DE6_15 Datasheet, PDF (2/7 Pages) Diodes Incorporated – PNP LOW SATURATION SWITCHING TRANSISTOR

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Continuous Collector Current
Peak Pulse Collector Current
Symbol
VCBO
VCEO
VEBO
IB
IC
ICM
ZXT13P12DE6
Value
Unit
-20
V
-12
V
-7.5
V
-500
mA
-4
A
-15
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Power Dissipation
Linear Derating Factor
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 7)
Symbol
PD
RθJA
RθJL
TJ, TSTG
Value
1.1
8.8
1.7
13.6
113
73
18.61
-55 to +150
Unit
W
mW/°C
°C/W
°C
ESD Ratings (Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
JEDEC Class
V
3A
V
C
Notes:
5. For a device mounted with collector leads on 25mm x 25mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is measured at t  5 seconds.
7. Thermal resistance from junction to solder-point (at the end of the collector leads).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Thermal Characteristics and Derating Information
10
1
100m
DC
1s
100ms
10ms
1ms
100µs
Single Pulse Tamb=25°C
10m
100m
1
10
V Collector-Emitter Voltage (V)
CE
Safe Operating Area
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
ZXT13P12DE6
Document Number: DS33637 Rev. 2 - 2
2 of 7
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October 2015
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