RF5146_1 Datasheet, PDF (4/13 Pages) RF Micro Devices – QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE

RF5146
Parameter
Overall (GSM900 Mode)
Operating Frequency Range
Maximum Output Power
Total Efficiency
Input Power Range
Output Noise Power
Forward Isolation 1
Forward Isolation 2
Cross Band Isolation 2f₀
Second Harmonic
Third Harmonic
All Other
Non-Harmonic Spurious
Input Impedance
Input VSWR
Output Load VSWR Stability
Specification
Min.
Typ.
Max.
+34.2
+32.0
0
8:1
880 to 915
58
+3
-86
-88
-45
-30
-15
-25
50
+5
-36
2.5:1
Output Load VSWR Ruggedness
10:1
Output Load Impedance
50
Power Control V_RAMP
Power Control Range
50
Notes:
V_RAMP_R_P=V_RAMP set for 34.2dBm at nominal conditions.
Unit
MHz
dBm
dBm
%
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
Ω
Ω
Condition
Temp=+25 °C, V_BATT=3.5V,
V_RAMP=1.6V, P_IN=3dBm, Freq=880MHz to
915 MHz,
25% Duty Cycle, Pulse Width=1154μs
Temp = 25°C, V_BATT=3.5V,
V_RAMP = 1.6 V
Temp=+85 °C, V_BATT=3.0V,
V_RAMP =1.6V
At P_{OUT MAX}, V_BATT=3.5V
Maximum output power guaranteed at mini-
mum drive level
RBW=100kHz, 925MHz to 935MHz,
P_OUT > +5dBm
RBW=100kHz, 935MHz to 960MHz,
P_OUT > +5dBm
TXEnable=Low, P_IN=+5dBm
TXEnable=High, V_RAMP=0.2V, P_IN=+5dBm
V_RAMP=0.2V to V_{RAMP_}R_P
V_RAMP=0.2V to V_{RAMP_}R_P
V_RAMP=0.2V to V_{RAMP_}R_P
V_RAMP=0.2V to 1.6V
V_RAMP=0.2V to 1.6V
Spurious<-36dBm, RBW=3MHz
Set V_RAMP where P_OUT<34.2dBm into 50 Ω
load
Set V_RAMP where P_OUT<34.2dBm into 50 Ω
load. No damage or permanent degradation to
part.
Load impedance presented at RF OUT pad
dB
V_RAMP=0.2V to 1.6V
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Rev A1 DS050928