RFSW6032 Datasheet, PDF (3/9 Pages) RF Micro Devices – Low Insertion High Isolation SP3T Switch

RFSW6032
Parameter
Specification
Unit Condition
Min Typ Max
General Performance -
Continued
Electrical Specifications, TA = 25°C, V_DD = 3V to 5V
900MHz Third Harmonic
-102 -85 dBc
2000MHz Second Harmonic
2000MHz Third Harmonic
Input IP3
Max Operational Input Power
Power Supply
-99 -80 dBc
Pin = 33dBm
-90 -77 dBc
70
dBm 2GHz, 21dBm per tone, 1MHz spacing
35
dBm
VDD Supply Current
65 100 μA
CTL1, CTL2 – Control Voltage High 1.3
2.7
V
CTL1, CTL2 – Control Voltage Low 0
0.45 V
Control Current
Switching Speed, One RF Port to
Another
Turn On Time
5
μA
2
5
us
4
20
us
Power-up / Power-down Sequence and Operation Controls
Power-up / Power-down
Power-up
Power-down
Switching Ports
Sequence for Power-up and Power-down from Supply that is Connected to VDD Pin
Turn on VDD, then C1 and C2, then (20μs or greater), apply RF signal
Turn off RF signal, then C1 and C2, turn off VDD
Turn off RF signal, then change C1 and C2 state, then (5μs or greater). Turn on RF signal
Switch is controlled by C1 and C2
Mode
RF1-ANT
RF2-ANT
RF3-ANT
C1
High
Low
High
C2
Low
High
High
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS140821
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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