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RFPD3540 Datasheet, PDF (3/5 Pages) RF Micro Devices – GaAs/GaN Power Doubler Hybrid
RFPD3540
RFMD + TriQuint = Qorvo
Parameter
Specification
Unit Condition
Min Typ Max
Distortion Data 40MHz to 550MHz. Test conditions unless otherwise noted: V+ = 24V; TMB = 35°C; ZS = ZL = 75Ω
CTB
-80
dBc
XMOD
CSO
-76
dBc
VO = 59dBmV at 1218MHz, 22dB extrapolated tilt, 79 analog channels plus 111
-80
dBc digital channels (-6dB offset)[2][4]
CIN
55
dB
Distortion Data 40MHz to 550MHz. Test conditions unless otherwise noted: V+ = 24V; TMB = 35°C; ZS = ZL = 75Ω
CTB
-76 -72 dBc
XMOD
CSO
-70 -65 dBc VO = 58dBmV at 1218MHz, 16.5dB extrapolated tilt, 79 analog channels plus
111 digital channels (-6dB offset)[3][4]
-80 -70 dBc
CIN
55 58
dB
1. The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency.
2. 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +37dBmV to +46.4dBmV tilted output level, plus 111 digital channels, -
6dB offset relative to the equivalent analog carrier.
3. 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +41.5dBmV to +48.5dBmV tilted output level, plus 111 digital channels, -
6dB offset relative to the equivalent analog carrier.
4. Composite Second Order (CSO) - The CSO parameter (both sum and difference products) is defined by ANSI/SCTE 6. Composite Triple Beat
(CTB) - The CTB parameter is defined by ANSI/SCTE 6. Cross Modulation (XMOD) - Cross modulation (XMOD) is measured at baseband
(selective voltmeter method), referenced to 100% modulation of the carrier being tested. Carrier to Intermodulation Noise (CIN) - The CIN
parameter is defined by ANSI/SCTE 17 (Test procedure for carrier to noise).
Revision DS20160126
© 2016 RF Micro Devices, Inc.
- 3 of 5 -
Disclaimer: Subject to change without notice
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