RFPD3540 Datasheet, PDF (2/5 Pages) RF Micro Devices – GaAs/GaN Power Doubler Hybrid

RFPD3540
Absolute Maximum Ratings
Parameter
RF Input Voltage (single tone)
DC Supply Over-Voltage (5 minutes)
Storage Temperature
Operating Mounting Base Temperature
RFMD + TriQuint = Qorvo
Rating
75
30
-40 to +100
-30 to +100
Unit
dBmV
V
°C
°C
Caution! ESD sensitive device.
RoHS status based on EU Directive
2011/65/EU .
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
Electrical Specifications
Parameter
Specification
Unit Condition
Min Typ Max
General Performance. Test conditions unless otherwise noted: V+ = 24V; TMB = 35°C; ZS = ZL = 75Ω
Operating Frequency Range
45
1218 MHz
Power Gain
27.0
dB f = 45MHz
27.0 28.0 29.0 dB f = 1218MHz
Slope[1]
0.5 1.0 2.0 dB f = 45MHz to 1218MHz
Flatness of Frequency Response
0.8 dB f = 45MHz to 1218MHz
Input Return Loss
-20
dB f = 45MHz to 320MHz
-18
dB f = 320MHz to 640MHz
-17
dB f = 640MHz to 870MHz
-16
dB f = 870MHz to 1000MHz
-15
dB f = 1000MHz to 1218MHz
Output Return Loss
-20
dB f = 45MHz to 320MHz
-19
dB f = 320MHz to 640MHz
-18
dB f = 640MHz to 870MHz
-17
dB f = 870MHz to 1000MHz
Noise Figure
Total Current Consumption (DC)
-16
dB f = 1000MHz to 1218MHz
5.1 5.5 _{dB f = 50MHz to 1218MHz}
420 450 _mA
Revision DS20160126
© 2016 RF Micro Devices, Inc.
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Disclaimer: Subject to change without notice
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