RFPA5026 Datasheet, PDF (3/16 Pages) RF Micro Devices – 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER

RFPA5026
Typical 5V Performance with Appropriate App Circuit
Parameter
(V_CC = 5V, ICQ = 602mA, 802.11a 54 Mb/s)
Units
5.15GHz 5.35GHz
5.7 GHz
Gain at P_OUT=26dBm
P1dB
P_OUT at 2.5% EVM
Current at P_OUT 2.5% EVM
Input Return Loss
Output Return Loss
Output Return Loss
dB
8.8
9.0
9.4
dBm
32.7
32.2
33.2
dBm
25.3
25.1
25.3
mA
632
631
670
dB
10
13
19
dB
15
13
15
dB
16.0
16.0
17.0
Pin Out
5.9 GHz
8.8
32.5
25.0
670
19
13
15.0
VBIAS
NC
RFIN
RFOUT/VCC
VPC
VDET
Pin
1
2
3
4
5
6
GND
Function
VBIAS
RF IN
VPC
VDET
RF OUT/VCC
NC
GND
Description
This is the supply voltage for the active bias circuit.
This is the RF input pin and has a DC voltage present. An external DC block is required.
Power up/down control pin. The voltage on this pin should never exceed the voltage on pin 1 by more than 0.5V unless
the supply current from pin 3 is limited<10mA.
This is the output port for the power detector. It samples the power at the input of the amplifier.
This is the RF output pin and DC connection to the collector.
This pin is not connected internal to the package. Buss it to pin 5 as shown on the app circuit to achieve the specified
performance.
These pins are DC connected to the backside paddle. They provide good thermal connection to the backside paddle for
hand soldering and rework. Many thermal and electrical GND vias are recommended as shown in the landing pattern.
DS121114
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
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