RFPA2545 Datasheet, PDF (3/19 Pages) RF Micro Devices – Broadband 4W GaAs HBT Power Amplifier 1400MHz to 2700MHz

RFPA2545
Parameter
2110MHz to 2170MHz –
Continued
Noise Figure
Input Power (PIN)
2590MHz to 2690MHz
Frequency
Gain
Output IP3
ACPR
P1dB
Input Return Loss
Output Return Loss
Noise Figure
Input Power (PIN)
Power Supply
Operating Current (Quiescent)
Thermal Resistance
Shutdown Leakage Current
Specification
Unit
Min Typ Max
Condition
VCC = VBIAS = VREG = 5V, Temp = 25°C, Optimized for
ACPR at Rated Power
5.7
dB
19 dBm Max recommended continuous P_IN, V_CC = V_BIAS = 5V, Load VSWR = 2:1
VCC = VBIAS = VREG = 5V, Temp = 25°C, Optimized for
ACPR at Rated Power
2640
MHz
11.8
dB
48.1
-51.9
35.6
dBm
dBc
dBm
POUT 18dBm per tone, 1MHz spacing
RF Output power = 25dBm, WCDMA 3GPP 3.5, test model 1, 64 DPCH
-21
dB Small signal S11
-25
dB Small signal S22
5.9
dB
20 dBm Max recommended continuous P_IN, V_CC = V_BIAS = 5V, Load VSWR = 2:1
800
mA _{At VCC = VBIAS = 5V, VREG = 5V}
8
°C/W Junction-to-back side of IC, at V_CC = V_BIAS = V_REG = 5V, reference Temp = 85°C,
No RF
10
µA At VCC = VBIAS = 5V, VREG = 5V
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS150130
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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