RFPA2089 Datasheet, PDF (3/16 Pages) RF Micro Devices – InGaP HBT POWER AMPLIFIER 0.25W, 50MHz to 2700MHz

RFPA2089
Parameter
LTE Bands 7, 15, 16
(2.58GHz to 2.69GHz)
Frequency
Input Power (Pin)
Specification
Min.
Typ.
Max.
2.58
2.64
2.69
11
Gain (S21)
P1dB
Input Return Loss (S11)
Output Return Loss (S22)
Noise Figure
WCDMA Channel Power at -60dBc
ACPR
Power Supply
Operating Current (Quiescent)
Operating Voltage (V_CC)
Thermal Resistance (R_TH)
17.5
24.7
20
9.5
3.9
13.3
138
5.0
52
5.25
Unit
GHz
dBm
dB
dBm
dB
dB
dB
dBm
Condition
V_CC = 5.0V, I_CQ = 138mA
EVB tuned for optimum 60dBc ACPR
Max recommended continuous input power,
V_CC < 5.25V, Load VSWR < 2:1
EVB tuned for linear operation
3GPP 3.5, Test Model 1, 64 DPCH
mA
At V_S = 5.0V with dropping R = 3.9:
V
Max recommended collector voltage for contin-
uous operation
C/W
Junction to Pin 4
DS130211
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
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