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RFHA3960 Datasheet, PDF (3/12 Pages) RF Micro Devices – Broadband Operation DC to 6GHz
RFHA3960
Parameter
RF Functional Test
VGS (Q)
Linear Gain
Power Gain
Drain Efficiency
PAE
Input Return Loss
ACP
RF Typical Performance
Small Signal Gain
Output Power at P3dB
Drain Efficiency at P3dB
PAE
Input Return Loss
IMD3
RF Typical Performance
Small Signal Gain
Output Power at P3dB
Drain Efficiency at P3dB
PAE
Input Return Loss
IMD3
PRELIMINARY
Specification
Min Typ Max
-1.1
16
13
TBD
TBD
-12
TBD
16
35
57
54
-17
-40
15.5
Unit Condition
Test Conditions: VDSQ = 28V, IDQ = 50mA,
T = 25°C, Performance in a standard tuned test fixture
V
VDSQ = 28V, IDQ = 50mA
dB CW,PIN = 0dBm, f = 2500MHz
dB CW,PIN = 22dBm, f = 2500MHz
%
%
dB
dBc
Test Conditions: CW operation, VDSQ = 28V, IDQ = 50mA,
T = 25°C, Performance in a standard tuned test fixture
dB CW, f = 2500MHz
dBm CW, f = 2500MHz
% CW, f = 2500MHz
% CW, f = 2500MHz
dB CW, f = 2500MHz
dBc 2-Tone, fc = 2500MHz,1MHz Tone spacing, VDSQ = 28V, IDQ = 50mA
Test Conditions: CW operation, VDSQ = 48V, IDQ = 50mA,
T = 25°C, Performance in a standard tuned test fixture
dB CW, f = 2500MHz
38
dBm CW, f = 2500MHz
50
% CW, f = 2500MHz
47
% CW, f = 2500MHz
-23
dB CW, f = 2500MHz
-45
dBc 2-Tone, fc = 2500MHz,1MHz Tone spacing, VDSQ = 48V, IDQ = 80mA
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS131206
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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