RFHA3960 Datasheet, PDF (2/12 Pages) RF Micro Devices – Broadband Operation DC to 6GHz

RFHA3960
PRELIMINARY
Absolute Maximum Ratings
Parameter
Drain Voltage (VD)
Gate Voltage (VG)
Operational Voltage
Ruggedness (VSWR)
Storage Temperature Range
Operating Temperature Range (TC)
Operating Junction Temperature (TJ)
Human Body Model
MTTF (TJ < 200°C, 95% Confidence Limits)^*
MTTF (TJ < 250°C, 95% Confidence Limits)^*
Thermal Resistance, RTH (junction to case) measured at TC =
85°C, DC bias only
Rating
150
-8 to +2
50
10:1
-55 to +125
-40 to +85
200
Class 1A
1.8E + 07
1.4E + 05
TBD
Unit
V
V
V
°C
°C
°C
Hours
°C/W
Caution! ESD sensitive device.
RFMD Green: RoHS status based on EU
Directive 2011/65/EU (at time of this
document revision), halogen free per IEC
61249-2-21, < 1000ppm each of antimony
trioxide in polymeric materials and red
phosphorus as a flame retardant, and
<2% antimony in solder.
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
Nominal Operating Parameters
Parameter
Specification
Min Typ Max
Recommended Operating
Conditions
Drain Voltage (VDSQ)
Gate Voltage (VGSQ)
Drain Bias Current
28
-4.5 -1.11
50
Frequency of Operation
Recommended Operating
Conditions
Drain Voltage (VDSQ)
Gate Voltage (VGSQ)
Drain Bias Current
Frequency of Operation
Capacitance
2500
48
-4.5 -1.12
50
2500
CRSS
CISS
COSS
DC Functional Test
TBD
TBD
TBD
IG (OFF) - Gate Leakage
ID (OFF) - Drain Leakage
VGS (TH) - Threshold Voltage
IG (stress) – Gate Leakage at high Drain
Voltage
0.05
0.01
0.95
0.1
Unit Condition
V
V
mA
MHz
V
V
mA
MHz
pF
VG = -4V, VD = 0V
pF
pF
mA VG = -4V, VD = 0V
mA VG = -4V, VD = 18V
V
VD = 48V, ID = 2.2mA
mA VG = -4V, VD = 150V
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS131206
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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