RFHA3944 Datasheet, PDF (3/11 Pages) RF Micro Devices – 65W GaN Wide-Band Power Amplifier

RFHA3944
Parameter
Capacitance
CRSS
CISS
COSS
RF Functional Test
VGSQ
Gain
Drain Efficiency
Input Return Loss
Output PAR (CCDF at 0.01%)
RF Typical Performance
Gain
Drain Efficiency
Input Return Loss
Adjacent Channel Power
Gain
Output Power
Drain Efficiency
Specification
Unit
Min Typ Max
Condition
3.5
pF
29
pF VG = -8V, VD = 0V
21
pF
Test Conditions: VDSQ = 48V, IDSQ = 540mA, T = 25°C, WCDMA
ACP measured at ±5.0MHz at 3.84MHz BW, Performance in a
standard tuned test fixture
-1.3 -0.9 -0.6
13.5 14.5
V
VDSQ = 48V, IDSQ = 540mA
dB
27.5 31
% _{IS95 (9 channel model, 9.8dB PAR at 0.01% CCDF), POUT = 42.4dBm,}
-11 -7
dB ^{f = 2140MHz}
5.0 6.0
dB
Test Conditions: VDSQ = 48V, IDSQ = 540mA, T = 25°C, WCDMA
ACP measured at ±5.0MHz at 3.84MHz BW, Performance in a
standard tuned test fixture
15.0
dB
28.0
-12
% _{WCDMA (3GPP TM1, 7.5dB PAR at 0.01% CCDF), POUT = 41.8dBm,}
dB ^{f = 2140MHz}
-42
dBc
14.5
dB
48.1
dBm CW, f = 2140MHz
55
%
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS131024
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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