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RFHA3944 Datasheet, PDF (2/11 Pages) RF Micro Devices – 65W GaN Wide-Band Power Amplifier
Absolute Maximum Ratings
Parameter
Rating
Unit
Caution! ESD sensitive device.
Drain Voltage (VD)
Gate Voltage (VG)
Gate Current (IG)
Operational Voltage
150
V
-8 to +2
V
30
mA
50
V
RoHS (Restriction of Hazardous
Substances): Compliant per EU Directive
2011/65/EU.
Ruggedness (VSWR)
10:1
Storage Temperature Range
Operating Temperature Range (TL)
Operating Junction Temperature (TJ)
Human Body Model
MTTF (TJ < 200°C, 95% Confidence Limits)*
-65 to +125
-40 to +85
250
Class 1B
3.2E + 06
°C
°C
°C
Hours
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
MTTF (TJ < 250°C, 95% Confidence Limits)*
5.3E + 04
Hours
Thermal Resistance, Rth (junction to case) measured
at TC = 85°C, DC bias only
1.7
°C/W
* MTTF – median time to failure for wear-out failure mode (30% IDSS degradation) which is determined by the technology process reliability.
Refer to product qualification report for FIT (random) failure rate.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current
must not exceed the maximum operating values specified in the table above.
Bias Conditions should also satisfy the following expression: PDISS < (TJ – TC) / RTH J-C and TC = TCASE
Nominal Operating Parameters
Parameter
Specification
Unit
Min Typ Max
Recommended Operating
Conditions
Drain Voltage (VDSQ)
Gate Voltage (VGSQ)
Drain Bias Current (IDSQ)
Frequency of Operation
DC Function Test
28
48
V
-1.5 -0.9 -0.4
V
540
mA
DC
4000 GHz
IG(OFF) – Gate Leakage
ID(OFF) – Drain Leakage
VGS(TH) – Threshold Voltage
VDS(ON) – Drain Voltage at High
Current
0.02
0.2
-1.4
0.75
mA VG = -8V, VD = 0V
mA VG = -8V, VD = 48V
V VD = 48V, ID = 20mA
V VG = 0V, ID = 1.5A
Condition
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS131024
RF MICRO DEVICES® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
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