RFHA3832 Datasheet, PDF (3/11 Pages) RF Micro Devices – 10W GaN Wide-Band Power Amplifier

RFHA3832
PRELIMINARY
Parameter
RF Functional Test
VGS(Q)
Power Gain
Input Return Loss
Output Power
Power Added Efficiency (PAE)
Specification
Min Typ Max
-0.9
15.5
-15
39.8
46
Unit
V
dB
dB
dBm
%
Condition
Test Conditions: VDSQ = 48V, IDQ = 88mA, CW, f = 500MHz, T =
25ºC, Performance in a standard tuned test fixture
PIN = 24.5dBm
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS131205
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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