RFHA3832 Datasheet, PDF (2/11 Pages) RF Micro Devices – 10W GaN Wide-Band Power Amplifier

RFHA3832
PRELIMINARY
Absolute Maximum Ratings
Parameter
Rating
Unit
Caution! ESD sensitive device.
Drain Voltage (VD)
Gate Voltage (VG)
Gate Current (IG)
Operational Voltage
RF- Input Power
Ruggedness (VSWR)
Storage Temperature Range
Operating Temperature Range (TL)
Operating Junction Temperature (TJ)
Human Body Model
MTTF (TJ < 200°C, 95% Confidence Limits)*
MTTF (TJ < 250°C, 95% Confidence Limits)*
150
-8 to +2
10
48
30
12:1
-55 to +125
-40 to +85
250
Class 1A
3.2E + 06
5.3E + 04
V
V
mA
V
dBm
°C
°C
°C
Hours
RFMD Green: RoHS compliant per EU
Directive 2011/65/EU, halogen free per
IEC 61249-2-21, <1000ppm each of
antimony trioxide in polymeric materials
and red phosphorus as a flame retardant,
and <2% antimony solder.
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
Thermal Resistance, RTH (Junction to Case)
measured at TC = 85°C, DC bias only
TBD
°C/W
* MTTF – median time to failure as determined by the process technology wear-out failure mode. Refer to product qualification report for FIT (random)
failure rate.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current
must not exceed the maximum operating values specified in the table above.
Bias Conditions should also satisfy the following expression: PDISS < (TJ – TC) / RTH J-C and TC = TCASE
Nominal Operating Parameters
Parameter
Specification
Unit
Min Typ Max
Condition
Recommended Operating
Conditions
Drain Voltage (VDSQ)
Gate Voltage (VGSQ)
Drain Bias Current
RF Input Power (PIN)
Input Source VSWR
RF Performance
Characteristics
48
V
-5
-0.9
V
88
mA
30 dbm
10:1
Frequency Range
30
1000 MHz Small signal 3dB bandwidth
Linear Gain
19.5
dB PIN = 10dBm, 30MHz to 1000MHz
Power Gain
15.5
dB PIN = 24.5dBm, 30MHz to 1000MHz
Gain Variation with Temperature
TBD
dB/°C
Input Return Loss (S11)
-14
dB
Output Power (P3dB)
40
dBm 30MHz to 1000MHz
Power Added Efficiency (PAE)
48
% 30MHz to 1000MHz
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS131205
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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