RFHA1027 Datasheet, PDF (3/10 Pages) RF Micro Devices – 500W GaN Wide-Band Pulsed Power Amplifier

RFHA1027
Parameter
Specification
Unit
Min Typ Max
Condition
RF Functional Test
Test Conditions: PW = 1ms, DC = 10%, VDSQ = 50V, IDQ = 750mA,
T = 25ºC, Performance in a standard tuned test fixture.
Power Gain
12.5 13.6
dB
Input Return Loss
Output Power
-5
56.5 57.6
dB
dBm
f = 1200MHz, PIN = 44dBm
Drain Efficiency
53
%
Power Gain
12.5 13.3
dB
Input Return Loss
Output Power
-5
56.5 57.3
dB
dBm
f = 1300MHz, PIN = 44dBm
Drain Efficiency
55
%
Power Gain
12.5 12.8
dB
Input Return Loss
Output Power
-5
56.5 56.8
dB
dBm
f = 1400MHz, PIN = 44dBm
Drain Efficiency
54
%
RF Typical Performance
Frequency Range
1200
1400 MHz
Low Power Gain
Power Gain
Gain Variation with Temperature
15.8
13.3
-0.019
dB
dB
dB/°C
POUT = 36dBm [1,2]
PIN = 44dBm [1,2]
At peak output power [1,2]
Output Power (PSAT)
57
dBm
Peak output power [1,2]
500
W
Drain Efficiency
54
% At peak output power [1,2]
[1] Test Conditions: PW = 1ms, DC = 10%, VDSQ = 50V, IDQ = 750mA, T = 25ºC.
[2] Performance in a standard tuned test fixture.
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS140204
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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