RFHA1027 Datasheet, PDF (2/10 Pages) RF Micro Devices – 500W GaN Wide-Band Pulsed Power Amplifier

RFHA1027
Absolute Maximum Ratings
Parameter
Rating
Unit
Caution! ESD sensitive device.
Drain Voltage (VD)
Gate Voltage (VG)
Operating Voltage
Ruggedness (VSWR)
150
V
-8 to 2
V
65
V
10:1
RoHS (Restriction of Hazardous
Substances): Compliant per EU Directive
2011/65/EU.
Storage Temperature Range
-55 to +125
°C
Operating Temperature Range (TC)
Operating Junction Temperature (TJ)
Human Body Model
MTTF (TJ < 200°C, 95% Confidence Limits)*
MTTF (TJ < 250°C, 95% Confidence Limits)*
-40 to +85
200
Class 1A
1.8E + 07
1.1E + 05
°C
°C
Hours
Hours
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
Thermal Resistance, RTH (Junction to Case)
TC = 85°C, DC Bias Only
TC = 85°C, 100μs Pulse, 10% Duty Cycle
0.90
°C/W
0.13
TC = 85°C, 1ms Pulse, 10% Duty Cycle
0.25
* MTTF – median time to failure for wear-out failure mode (30% IDSS degradation) which is determined by the technology process reliability. Refer to
product qualification report for FIT(random) failure rate.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current
must not exceed the maximum operating values specified in the table above.
Bias Conditions should also satisfy the following expression: PDISS < (TJ – TC) / RTH J-C and TC = TCASE
Nominal Operating Parameters
Parameter
Specification
Min Typ Max
Recommended Operating
Conditions
Drain Voltage (VDSQ)
Gate Voltage (VGSQ)
Drain Bias Current
Frequency of Operation
DC Functional Test
50
-8 -3.3
750
1200
-2
1400
IG(OFF) – Gate Leakage
ID(OFF) – Drain Leakage
VGS(TH) – Threshold Voltage
VDS(ON) – Drain Voltage at high
current
3
15
-3.5
0.43
Unit
V
V
mA
MHz
mA VG = -8V, VD = 0V
mA VG = -8V, VD = 50V
V
VD = 50V, ID = 40mA
V
VG = 0V, ID = 1.5A
Condition
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS140204
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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