RFG1M09090 Datasheet, PDF (3/11 Pages) RF Micro Devices – 90W GaN Power Amplifier

RFG1M09090
Parameter
Specification
Min Typ Max
RF Functional Test
VGS (Q)
Gain
Drain Efficiency
Input Return Loss
Output PAR (CCDF at 0.01%)
Adjacent Channel Power
Gain
Drain Efficiency
Output PAR (CCDF at 0.01%)
-3.2
18
19.8
38
39
-11
-8
5.8
6.1
-33.5 -28.5
17
19
44
46.5
5
5.8
[1] Test Conditions: V_DSQ = 48V, I_DQ = 300mA, T = 25°C
[2] Performance in a standard tuned test fixture
Unit Condition
[1],[2]
V
VD = 48V, ID = 300mA
dB 3GPP (TM1, 7.5dB PAR at 0.01% CCDF),
%
POUT = 44dBm, f = 960MHz
dB
dB
dBc
dB IS95 (9-channel model, 9.8dB PAR at
%
0.01% CCDF), POUT = 45dBm, f = 960MHz
dB
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS130830
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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