RFG1M09090 Datasheet, PDF (2/11 Pages) RF Micro Devices – 90W GaN Power Amplifier

RFG1M09090
Absolute Maximum Ratings
Parameter
Rating
Unit
Caution! ESD sensitive device.
Drain Voltage (VD)
Gate Voltage (VG)
Gate Current (IG)
Operational Voltage
Ruggedness (VSWR)
Storage Temperature Range
Operating Temperature Range (TL)
Operating Junction Temperature (TJ)
Human Body Model
MTTF (TJ < 200°C, 95% Confidence Limits)^*
Thermal Resistance, RTH (junction to case) measured
at TC = 85°C, DC bias only
150
-8 to +2
105
50
10:1
-65 to +125
-25 to 85
200
Class 1A
3E + 06
2.7
V
V
mA
V
°C
°C
°C
Hours
°C/W
RFMD Green: RoHS compliant per EU
Directive 2011/65/EU, halogen free per
IEC 61249-2-21, <1000ppm each of
antimony trioxide in polymeric materials
and red phosphorus as a flame retardant,
and <2% antimony solder.
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
* MTTF – Median time to failure as determined by the process technology wear-out failure mode. Refer to product qualification report for FIT
(random) failure rate.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and
current must not exceed the maximum operating values specified in the table below.
Bias Conditions should also satisfy the following expression: PDISS < (TJ – TC) / RTH J - C and TC = TCASE
Nominal Operating Parameters
Bias Conditions should also satisfy the following express_Sio_pn_e: _cPD_ifIS_iS_c<_at(T_ioJ –_nTC) / RTH J-C and TC = TCASE
Parameter
Unit Condition
Min Typ Max
Recommended Operating
Conditions
Drain Voltage (VDSQ)
Gate Voltage (VGSQ)
Drain Bias Current
Frequency of Operation
28
48
V
-4.5 -3.2
-2.0
V
300
mA
700
1000 MHz
Capacitance
CRSS
CISS
COSS
DC Functional Tests
IG (OFF) - Gate Leakage
ID (OFF) - Drain Leakage
VGS (TH) - Threshold Voltage
VDS (on) - Drain Voltage at High Current
5.4
77.6
15.1
pF
VG = -8V, VD = 0V
pF
pF
2
2.5
-3.6
0.45
mA VG = -8V, VD = 0V
mA VG = -8V, VD = 48V
V
VD = 48V, ID = 14mA
V
VG = 0V, ID = 1.5A
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS130830
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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