RFFM6205 Datasheet, PDF (3/8 Pages) RF Micro Devices – 2.0V to 4.0V, 2.4GHz Front End Module

RFFM6205
Parameter
Transmit Mode - Power
Amplifier (continued)
Supply Current
Quiescent Current
2f0; POUT = 14dBm
2f0; POUT = 14dBm, with external filter
3f0; POUT = 14dBm
VSWR: Stability (ruggedness)
VSWR: No Damage
Gain Settling Time
Receive Mode – LNA
Input Return Loss
Output Return Loss
Gain
Gain Flatness
Noise Figure
Supply Current
IIP3
IP1dB
Bidirectional Thru Mode
Insertion Loss
Input Return Loss
Output Return Loss
Supply Current
IIP3
Gain flatness
Maximum Input Power
Bluetooth Transmitter GFSK
20dB Bandwidth
Adjacent Channel Power |M – N| = 2
Adjacent Channel Power |M – N| ≥ 3
Bluetooth Transmitter EDR
In-Band Spurious Emission
Adjacent Channel Power |M – N| = 2
Adjacent Channel Power |M – N| ≥ 3
Logic
Logic Level "High"
Specification
Min Typ Max
13
17
19
21
5
-20.0
-45.0
-50.0
230
18
21
23
27
-15.0
-42.0
4:1
8:1
300
12.0
9.0
10.0
8.0
11.0 14.0
14.5
-0.3
0.3
2.5
3.0
2.0
4.0
7.0
4.0
-8.0 -5.0
1.5
2.5
10.0
10.0
100
400
35.0 40.0
-0.3
0.3
25
870
-63
-72
-35
-33
-45
1.6
1.8
VBAT
Unit
mA
mA
mA
mA
mA
dBm/MHz
dBm/MHz
dBm/MHz
ns
dB
dB
dB
dB
dB
mA
dBm
dBm
dB
dB
dB
nA
dBm
dB
dBm
kHz
dBc
dBc
dBc
dBc
dBc
V
Condition
VDD_TX = 3.0V, C_EN = High, VDD_RX = 3.0V,
C_TX =High, C_RX =Low, C_BYP =Low, Temp =25°C
VDD_TX = 2.0V; POUT = 10dBm
VDD_TX = 3.0V; POUT = 13dBm
VDD_TX = 3.3V; POUT = 14dBm
VDD_TX = 4.0V; POUT = 15dBm
IDD_RX + IDD_TX
10% to 90%
VDD_TX = 3.0V, C_EN = High, VDD_RX = 3.0V,
C_TX =Low, C_RX =High, C_BYP =Low, Temp =25°C
VDD_TX = 3.0V, C_EN = High, VDD_RX = 3.0V,
C_TX =Low, C_RX =Low, C_BYP =High, Temp =25°C
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
DS150115
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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