RFAM2790 Datasheet, PDF (3/6 Pages) RF Micro Devices – Integrated Amplifier

RFAM2790
Parameter
Specification
Unit
Min.
Typ.
Max.
Condition
Attenuator
V+ = 12V; T_MB = 30°C; Z_S = Z_L = 75
Attenuator Range
0 to 20
dB
Attenuator Voltage 0V to 12V
Power Enable/Disable
Amp enabled
Logic high (3.3V) applied to power enable
pin[3]
Amp disabled
Logic low (0V) applied to power enable pin[4]
[1] The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency.
[2] 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +46dBmV flat output level, plus 75 digital channels, -6dB offset
relative to the equivalent analog carrier.
Composite second order (CSO) - The CSO parameter (both sum and difference products) is defined by the NCTA.
Composite triple beat (CTB) - The CTB parameter is defined by the NCTA.
Cross modulation (XMOD) - Cross modulation (XMOD) is measured at baseband (selective voltmeter method), referenced to 100% modulation
of the carrier being tested.
carrier to intermodulation noise (CIN) - The CIN parameter is defined by ANSI/SCTE 17 (Test procedure for carrier to noise).
[3] Logic high is defined as power enable voltage >2V
[4] Logic low is defined as power enable voltage <0.4V
Power
Enable
Att.
Adjust
GND
RF INPUT
C8
4.7nF
C9
1
4.7nF
2
C2
4.7nF
T1
RFXF0006
3
4
C1
D1
DNI
TQP200002
25V
Application Circuit
FB1
Bead 60
R1
10k
D3
TGL34-33A
C3
4.7nF
9
8
U1
RFAM2790
7
6
5
D2
MM3Z5V6T1
T2
RFXF0008
C4
4.7nF
T3
RFXF0009
C5
4.7nF
C6
4.7nF
D4
C7
TQP200002
DNI
25V
V+
RF OUTPUT
DS121001
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