RFAM2790 Datasheet, PDF (1/6 Pages) RF Micro Devices – Integrated Amplifier

RFAM2790
45MHz to
1003MHz
GaAs Edge
QAM Inte-
grated Ampli-
fier
RFAM2790
45MHz to 1003MHz GaAs Edge QAM
Integrated Amplifier
Package: 9-pin, 11.0mm x 11.0mm x 1.375mm
POWER ENABLE
V+
Features
 Excellent Linearity
 Extremely High Output Capability
 Voltage Controlled Attenuator
 Power Enable Feature
 Optimal Reliability
 Low Noise
 Unconditionally Stable Under all
Terminations
 27dB Typical Gain at 1003MHz
 410mA Typical at 12V_DC
Applications
 45MHz to 1003MHz
Downstream Edge QAM RF
Modulators
 Headend Equipment
INPUT
OUTPUT
Preamp
Driver
ATTENUATOR
ADJUST
Functional Block Diagram
Product Description
The RFAM2790 is an integrated edge QAM amplifier module. The part employs
GaAs pHEMT die, GaAs MESFET die, a 20dB range variable attenuator and a power
enable feature, has high output capability, and is operated from 45MHz to
1003MHz. It provides excellent linearity and superior return loss performance with
low noise and optimal reliability.
Ordering Information
RFAM2790SB
RFAM2790SR
RFAM2790TR7
RFAM2790TR13
RFAM2790PCBA-410
Sample bag with 5 pieces
7" Reel with 100 pieces
7" Reel with 250 pieces
13" Reel with 750 pieces
Fully Assembled Evaluation Board
DS121001
Optimum Technology Matching^® Applied
 GaAs HBT
SiGe BiCMOS
GaAs pHEMT
GaN HEMT
GaAs MESFET
Si BiCMOS
Si CMOS
BiFET HBT
InGaP HBT
SiGe HBT
Si BJT
SOI
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
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